SiC Characteristics 10x the breakdown electrical field energy of silicon, rendering it achievable to configure bigger voltage (600V to thousands of V) power devices via a thinner drift layer and higher impurity focus. Because many of the resistance part of high-voltage devices is situated within the drift layer resistance, SiC https://www.quora.com/profile/Trevor-Flatcher-2/Silicon-carbide-special-ceramics-in-modern-industry-in-a-variety-of-applications-Silicon-Carbide-Special-Ceramics-in-Mo