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Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte

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Abstract The use of an identical electrolyte in electrochemical metallization (ECM)-based neuron and synaptic devices has not yet been achieved due to their different resistive-switching characteristics. Herein. we describe ECM devices comprising the same ferroelectric PbZr0. 52Ti0. https://countryscenesaddleryandpetsuppliers.shop/product-category/shirts/
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